Crosslight Software

Key peopleDr. Simon Li, Founder & CEOProductsWebsiteCrosslight Software Inc.

Is an international company headquartered in greater Vancouver, BC, Canada.Officially spun off from the in 1995,it provides Technology Computer Aided Design tools for semiconductor device and process simulations.Crosslight's founder, Dr. Simon Li (李湛明), is a pioneerin the field of optoelectronic device simulation and based on this work, Crosslight claims to be thefirst commercial vendor of TCAD tools for.Crosslight also licenses other technology from thefor semiconductor process simulations. Contents.History After its initial spin-off from the NRC, Crosslight launched its flagship product LASTIP, a 2D simulator for quantumwell laser diodes. Hill, Bert (September 27, 1996). 'NRC Showcases Spinoff Companies'. The Ottawa Citizen.

Crosslight Apsys Crack

^ Li, Z.-M.; Dzurko, Kenneth M.; Delage, A.; McAlister, S.P. (April 1992).

'A self-consistent two-dimensional model of quantum-well semiconductor lasers: optimization of a GRIN-SCH SQW laser structure'. Quantum Electron. 28 (4): 792–803.

Grupen, M.; Hess, K. 'The self-consistent simulation of the modulation responses of quantum well lasers'. IEEE Transactions on Electron Devices. 40 (11): 2105–2106. Yamaguchi, K.; Ohtoshi, T.; Kanai-Nagaoka, C.; Uda, T. (July 3, 1996). 'Two-dimensional device simulator for laser diodes: HILADIES'.

22 (14): 740–741. Z. 'Algorithm models thermal effects in VCSELs'. Laser Focus World, May 1997, Page 251. Missing or empty url=. Li, Z.Q. ('Leo'); Li, Simon (July 2007).

Compound Semiconductor. 13 (6): 29–31.

Archived from (PDF) on 2011-07-08. Compound Semiconductor Magazine. May 30, 2012. Retrieved Jan 31, 2014.

'Acceleware Delivers 100X Speed Up for Solar Cell Simulations'. FOX Business. January 19, 2010.

Ray, Randy (March 7, 2011). 'Crosslight scores with laser-testing software'. The Ottawa Citizen. Opto-electronic Group, UBC. Semiconductor device group, NCUE. NUSOD. Applied Nano & Bio photonics Group, University of Arkansas,.

University of Toronto Smart Power Integration & Semiconductor Devices Research Group,. Li, Z.Q.

'Chemical kinetics and design of gas inlets for III-V growth by MOVPE in a quartz showerhead reactor'. Crystal Growth, vol. 272, 2004,pp. Missing or empty url=.

AlGaN/GaN high electron mobility transistors (HEMTs) have emerged as promising candidates for high breakdown, high power output, and high operating temperature applications. However, there are several problems that hinder its practical use such as current collapse and high gate leakage current. Most of available studies use analytical formulas and only analyze a certain aspect. Physical models that can predict both phenomena consistently and describe a larger picture of device behavior are still lacking, which will be addressed in this work.